2sd1609, 2SD1610 silicon npn epitaxial application low frequency high voltage amplifier complementary pair with 2sb1109 and 2sb1110 outline 1. emitter 2. collector 3. base to-126 mod 1 2 3 absolute maximum ratings (ta = 25?) ratings item symbol 2sd1609 2SD1610 unit collector to base voltage v cbo 160 200 v collector to emitter voltage v ceo 160 200 v emitter to base voltage v ebo 55v collector current i c 100 100 ma collector power dissipation p c 1.25 1.25 w junction temperature tj 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c
2sd1609, 2SD1610 2 electrical characteristics (ta = 25?) 2sd1609 2SD1610 item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo 160 200 v i c = 10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo 160 200 v i c = 1 ma, r be = emitter to base breakdown voltage v (br)ebo 5 5 vi e = 10 m a, i c = 0 collector cutoff current i cbo 10 m av cb = 140 v, i e = 0 10 v cb = 160 v, i e = 0 dc current tarnsfer ratio h fe1 * 1 60 320 60 320 v ce = 5 v, i c = 10 ma h fe2 30 30 v ce = 5 v, i c = 1 ma base to emitter voltage v be 1.5 1.5 v v ce = 5 v, i c = 10 ma collector to emitter saturation voltage v ce(sat) 2 2 v i c = 30 ma, i b = 3 ma gain bandwidth product f t 140 140 mhz v ce = 5 v, i c = 10 ma collector output capacitance cob 3.8 3.8 pf v cb = 10 v, i e = 0, f = 1 mhz note: 1. the 2sd1609 and 2SD1610 are grouped by h fe1 as follows. bcd 60 to 120 100 to 200 160 to 320 maximum collector dissipation curve 1.5 1.0 0.5 0 50 100 150 ambient temperature ta ( c) collector power dissipation p c (w) typical output characteristics 20 16 12 8 4 024 collector to emitter voltage v ce (v) 10 8 6 collector current i c (ma) i b = 0 10 m a 20 30 40 60 70 80 90 100 110 120 50
2sd1609, 2SD1610 3 100 50 20 10 5 2 1 0 0.2 collector current i c (ma) 0.4 base to emitter voltage v be (v) 0.6 1.0 0.8 typical transfer characteristics v ce = 5 v ta = 75 c ?5 25 500 200 100 50 20 10 5 1 2 20 100 10 50 dc current transfer ratio h fe 5 collector current i c (ma) v ce = 5 v pulse dc current transfer ratio vs. collector current ta = 75 c 25 ?5 saturation voltage vs. collector current i c = 10 i b pulse 5 2 1.0 0.5 0.2 0.1 0.05 collector to emitter saturation voltage v ce(sat) (v) base to emitter saturation voltage v be(sat) (v) 12 10 collector current i c (ma) 550 20 100 v be(sat) v ce(sat) ta = ?5 c ta = ?5 c 25 75 75 25 gain bandwidth product vs. collector current 500 200 100 50 20 10 5 1.0 0.5 2 collector current i c (ma) 20 10 50 5 gain bandwidth product f t (mhz) v ce = 10 v
2sd1609, 2SD1610 4 50 20 10 5 2 1.0 0.5 1 collector output capacitance c ob (pf) 2510 collector to base voltage v cb (v) 20 100 50 collector output capacitance vs. collector to base voltage f = 1 mhz i e = 0
3.1 f +0.15 ?.1 8.0 0.5 2.3 0.3 1.1 3.7 0.7 11.0 0.5 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 2.7 0.4 120 120 120 hitachi code jedec eiaj weight (reference value) to-126 mod 0.67 g unit: mm
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